▼ Industry Background & Process Challenges
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CMP (Chemical Mechanical Planarization) is the core global planarization process in semiconductor manufacturing, directly determining the imaging quality and yield of multi-layer wafer interconnects. Precision delivery of slurry is a critical link in the CMP process — slurry contains 20–200 nm SiO₂/CeO₂/Al₂O₃ abrasive particles combined with chemical additives such as H₂O₂, KOH, and BTA, subjecting pump internals to simultaneous chemical corrosion and abrasive wear across a broad pH range of 2–12. Any flow pulsation, particle settling, or metal ion contamination will directly cause wafer scratching, uncontrolled removal rates, or entire batch scrap.
▼ Typical Process Pain Points & JONSN Solutions
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▎Abrasive Particle Settling & Agglomeration Leading to Line Clogging and Deteriorated Polishing Uniformity
SiO₂/CeO₂ nano-scale abrasive particles in CMP slurry are prone to electrostatic agglomeration and settling. The shear forces of conventional diaphragm and progressive cavity pumps disrupt particle dispersion uniformity, causing unstable removal rates, wafer surface scratches, and localized over-polishing. Particle settling within the pump chamber also leads to line clogging and unplanned equipment downtime.
Solution: Low-Shear Stable Delivery, Maintaining Abrasive Dispersion Stability
· JONSN MPG/MRA series magnetically driven micro gear pumps feature low gear shear rates (typically <1,000 s⁻¹), effectively preventing mechanical breakage of abrasive particles and disruption of dispersion structures.
· Pulse-free delivery ensures stable slurry flow velocity throughout the pipeline, preventing particle settling in low-velocity zones.
· Compatible with recirculation loop design — slurry remains in continuous circulation, eliminating settling risk at the source.
· Flow channel surface finish Ra ≤ 0.2 µm, dead-space-free design, reducing particle adhesion nucleation sites.
Recommended Configuration: JONSN MRA Series, 100–2,000 ml/min, low-shear pulse-free, abrasive dispersion retention >95%
▎Flow Pulsation Causing Uncontrolled Polishing Uniformity, Exceeding Within-Wafer Non-Uniformity (WIWNU) Specs
Instantaneous slurry flow fluctuations directly affect Material Removal Rate (MRR) and Within-Wafer Non-Uniformity (WIWNU). Conventional diaphragm and bellows pumps exhibit pulsation amplitudes of ±5%–10%, causing significant differences in polishing rates between wafer edge and center regions, and in severe cases leading to localized dishing or residual film layers — directly scrapping an entire wafer.
Solution: Pulse-Free Precision Metering Supply
· JONSN MPG series micro gear pumps feature involute tooth profile design with output pulsation amplitude ≤ ±1%, far superior to diaphragm and bellows pumps.
· Displacement per revolution of only 40 µl/r, combined with servo motor closed-loop control, achieving precisely adjustable flow from 1–280 ml/min with flow repeatability ≤ ±0.5%.
· Output flow is linearly proportional to rotational speed (R² >0.999), enabling real-time slurry supply adjustment via PLC/FMCS factory control systems.
· Supports multi-channel parallel output — multiple polishing heads on a single CMP tool receive independent slurry supply with individually adjustable flow per channel, without cross-interference.
Recommended Configuration: JONSN MPG Series, 40 µl/r, pulse-free metering, flow accuracy ≤ ±0.5%, multi-channel parallel capable
▎Combined Chemical Corrosion & Abrasive Wear — Short Pump Life with Frequent Replacement
CMP slurry pH ranges from strongly acidic (pH 2–4, oxide CMP) to strongly alkaline (pH 10–12, copper CMP), while containing high-hardness nano-scale abrasive particles. Under the combined action of chemical corrosion and abrasive wear, conventional pump body materials typically last less than 6 months. Frequent replacement not only increases operating costs but also introduces downtime losses and the risk of wear debris contaminating the slurry.
Solution: Full Flow Path Corrosion- & Wear-Resistant Material System
· Pump body materials offered in multiple options: 316L stainless steel (general-purpose), Hastelloy C-276 (strongly acidic slurry), PTFE/PEEK (extreme corrosive environments).
· Gear pairs available in tungsten carbide (WC), silicon carbide (SiC), or zirconia (ZrO₂), with hardness far exceeding that of abrasive particles for effective abrasive wear resistance.
· Flow channel surface finish Ra ≤ 0.2 µm, reducing particle adhesion and localized corrosion nucleation sites.
· Magnetic coupling seal design — no dynamic seals in contact with slurry, fundamentally eliminating leakage and contamination caused by seal failure.
Recommended Configuration: JONSN MRA-C Corrosion-Resistant Series, 316L/Hastelloy/WC material system, suitable for pH 2–12, design life >24 months
▎Micro-Additive Ratio Inaccuracy — Unstable Removal Rate and Selectivity
CMP slurry is typically mixed at the point of use (POU blending), requiring concentrate, deionized water (DIW), H₂O₂ oxidizer, BTA inhibitor, and other components to be mixed online in precise proportions. H₂O₂ addition is only 0.5%–3% of total flow — a ratio deviation exceeding ±5% can cause significant removal rate drift or loss of Cu/Ta/TEOS selectivity control.
Solution: Multi-Channel Online Precision Ratio Control System
· JONSN MPG multi-pump-head parallel configuration — each pump head independently controls one fluid stream (concentrate / DIW / H₂O₂ / BTA solution), with precise ratio setting via rotational speed ratio.
· Minimum single-channel flow of 1 ml/min, accommodating precise addition of micro-components such as H₂O₂.
· Servo motor response time <50 ms, enabling dynamic ratio adjustment to meet switching requirements across different process steps.
· Integrable with online concentration sensor feedback for H₂O₂ concentration closed-loop control, ratio accuracy ≤ ±2%.
Recommended Configuration: JONSN MPG Multi-Pump-Head Online Blending Assembly, 4–6 channels, 1–280 ml/min per channel, ratio accuracy ≤ ±2%
▎Metal Ion Contamination Threatening Wafer Yield and Device Reliability
Semiconductor processes are extremely sensitive to metal contamination — Cu/Fe/Ni metal ion concentrations exceeding ppb levels can cause device performance degradation and increased leakage current. Metallic moving parts in conventional pumps generate metal wear debris under abrasive wear and chemical corrosion, directly contaminating the slurry — at best affecting wafer surface quality, at worst causing entire batch scrap.
Solution: Ultra-Pure Material System & Metal-Free Contact Design
· JONSN offers full PTFE/PEEK flow path solutions — all wetted components are high-purity non-metallic materials, with metal ion leaching ≤ 1 ppb.
· Magnetic coupling drive achieves complete static sealing — no friction pairs generating particulate contamination, no risk of lubricant leakage.
· All materials comply with SEMI F57/F104 ultra-pure fluid contact material standards, with complete material certificates and traceability reports provided.
· Compatible with PFA/PTFE fittings and tubing assemblies, achieving a full ultra-pure fluid path from pump inlet to wafer surface.
Recommended Configuration: JONSN MPG/MRA-UP Ultra-Pure Series, full PTFE/PEEK flow path, metal ion leaching ≤ 1 ppb, SEMI F57 compliant
▼ JONSN CMP Slurry Delivery Recommended Product Matrix
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Product Series | Displacement / Flow Range | Key Features | Typical CMP Applications | Material & Process Compatibility |
MPG | 40 µl/r | • Ultra-precision metering | • Precision slurry supply | 316L / PTFE / PEEK |
MRA | 100–2,000 ml/min | • Medium-flow main supply | • Slurry main supply | 316L / Hastelloy |
MRA-C | 100–2,000 ml/min | • Heavy-duty corrosion resistant | • Strong-acid W CMP slurry | Hastelloy C-276 |
MPG/MRA-UP | 1–2,000 ml/min | • Ultra-pure grade | • Advanced node critical steps | PTFE / PEEK full flow path |
MRC | 0.8–20 L/min | • High-flow recirculation | • Slurry bulk recirculation system | 316L / PTFE lined |
▼ Core Value of JONSN CMP Slurry Solution
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▸ Pulse-Free Precision Metering:MPG series involute tooth profile design, output pulsation amplitude ≤ ±1%, flow accuracy ≤ ±0.5%, fundamentally ensuring CMP polishing uniformity and WIWNU performance.
▸ Low-Shear Abrasive Particle Protection:Low-speed gear shear rate <1,000 s⁻¹, preserving the dispersion state of nano-scale abrasive particles without disruption, avoiding agglomeration-induced removal rate fluctuations and wafer scratching.
▸ Full Flow Path Corrosion & Wear Resistance:Multiple material systems: 316L/Hastelloy/PTFE/PEEK, with WC/SiC/ZrO₂ gear pair options, satisfying full pH 2–12 tolerance and >24-month design life.
▸ Multi-Channel Online Precision Ratio Control:MPG multi-pump-head parallel configuration achieves online precise ratio control of concentrate/DIW/H₂O₂/BTA, ratio accuracy ≤ ±2%, supporting concentration sensor closed-loop feedback.
▸ Ultra-Pure Grade Metal Ion Control:Full PTFE/PEEK ultra-pure solution with metal ion leaching ≤ 1 ppb, SEMI F57/F104 compliant, meeting the stringent requirements of 14 nm and below advanced process nodes.
▸ Magnetic Seal — Zero Leakage, Zero Contamination:Magnetic coupling drive standard across the entire series — no dynamic seals in contact with slurry, completely eliminating the triple risk of leakage, wear debris, and lubricant contamination.
▼ Conclusion
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CMP slurry delivery is one of the few extreme-duty applications in semiconductor manufacturing that simultaneously involves precision metering, abrasive suspension, chemical corrosion, abrasive wear, and ultra-pure requirements. With MPG pulse-free precision metering, MRA low-shear stable delivery, a full range of multi-material systems, and magnetic seal zero-leakage technology, JONSN delivers a complete micro gear pump solution for CMP processes — from main slurry supply and multi-channel blending to large-scale recirculation. Whether for stable operation in mature nodes or the extreme demands of 14 nm and below advanced nodes, JONSN provides reliable fluid delivery assurance, empowering continuous improvement in semiconductor manufacturing yield and performance.

























