▼ Industry Background & Process Challenges
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Lithography is the core process in semiconductor manufacturing, accounting for 30%–35% of total wafer fabrication cost. From photoresist spin coating to development, from anti-reflective coatings to edge bead removal, the delivery precision of each chemical directly determines pattern resolution, CD uniformity, and defect density. As EUV/ArF lithography pushes toward 5 nm/3 nm nodes, the delivery requirements for photoresist, developer, BARC/TARC and other chemicals have reached nanoliter-level precision and zero-defect standards. Lithography chemicals exhibit high viscosity (5–200 cP), photosensitivity, solvent aggressiveness (PGMEA/PGME/Cyclohexanone), and extreme bubble sensitivity, posing benchmark-level technical challenges for delivery pumps.

▼ Typical Process Pain Points & JONSN Solutions
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▎Photoresist Precision Metering & Bubble Control — Even Microscopic Bubbles Cause Coating Defects
Photoresist is the most critical material in the lithography process, with typical viscosity of 5–200 cP and extreme sensitivity to bubbles — even μm-level micro-bubbles, when they burst during spin coating, create pinhole/comet defects on the wafer surface, directly causing pattern shorts or opens. Conventional bellows pumps and diaphragm pumps are prone to negative-pressure cavitation during the suction stroke, and pulsating flow leads to non-uniform coating thickness.

Solution: Bubble-Free, Pulse-Free Precision Photoresist Delivery

· JONSN MPG series magnetically driven micro gear pumps feature involute tooth profile design with pulse-free output, eliminating film thickness variation caused by pulsating flow.
· Precision gear meshing combined with positive-displacement design eliminates suction-stroke negative pressure, fundamentally preventing cavitation and bubble formation.
· Displacement per revolution of 40 µl/r, with servo motor closed-loop control, achieving per-spin-coat metering accuracy ≤ ±0.3% and photoresist waste reduction to <1%.
· Compatible with photoresist temperature conditioning system, precisely controlling delivery temperature to ±0.1°C, ensuring viscosity and film thickness consistency.

Recommended Configuration: JONSN MPG Series, 40 µl/r, bubble-free pulse-free, metering accuracy ≤ ±0.3%, photoresist waste <1%

▎Developer Concentration & Flow Fluctuation — CD Uniformity Out of Control
The development process is extremely sensitive to TMAH (2.38%) developer concentration, temperature, and flow. A ±2% fluctuation in developer flow can cause CD (Critical Dimension) deviation exceeding 1 nm, and in severe cases leads to non-uniform development (DIU) and excessive LER (Line Edge Roughness). The pulsating flow and flow drift of conventional diaphragm and magnetic drive pumps cannot meet the stringent requirements of sub-5 nm nodes.

Solution: Precision Developer Supply & Concentration Management

· JONSN MRA series medium-flow micro gear pumps (100–2,000 ml/min) deliver pulse-free flow with repeatability ≤ ±0.5%.
· Compatible with online concentration sensors and temperature control modules, enabling closed-loop developer concentration control and improving CD uniformity by 20%–30%.
· Multi-pump-head parallel configuration enables alternating supply of developer + rinse water (DIW), with each channel independently and precisely controlled.
· Full flow path alkali-resistant materials (316L/PTFE/PEEK), providing long-term resistance to alkaline corrosion from TMAH/KOH developers (pH 13+).

Recommended Configuration: JONSN MRA Series, 100–2,000 ml/min, pulse-free delivery, flow accuracy ≤ ±0.5%, with concentration closed-loop control

▎BARC/TARC Ultra-Thin Film Uniform Coating
BARC (Bottom Anti-Reflective Coating) and TARC (Top Anti-Reflective Coating) are key materials in advanced lithography for controlling standing wave effects and reflective interference, with typical film thickness of only 20–100 nm. Minute fluctuations in BARC/TARC coating thickness can deteriorate the standing wave performance of photoresist patterns — EUV lithography is particularly far more sensitive to film thickness uniformity than DUV. Additionally, BARC materials typically contain organic solvents such as PGMEA and cyclohexanone, placing stringent requirements on pump sealing and material compatibility.

Solution: BARC/TARC Pulse-Free Precision Coating Supply

· JONSN MPG series provides 1–280 ml/min pulse-free delivery, synchronized with the spin coater to ensure consistent BARC/TARC dispense volume on every wafer.
· Precision gear meshing combined with dead-space-free design keeps internal residual volume <0.1 ml, effectively reducing BARC/TARC material waste and cross-contamination risk.
· Available with full PTFE/PEEK flow path configuration, fully resistant to PGMEA, cyclohexanone, ethyl lactate (EL) and other organic solvents — no swelling, no leakage.
· Compatible with online film thickness measurement feedback for BARC thickness closed-loop control, film thickness uniformity ≤ ±1 nm (3σ).

Recommended Configuration: JONSN MPG Series, 40 µl/r, full PTFE/PEEK flow path, dead-space-free residual <0.1 ml, organic solvent resistant

▎Strongly Corrosive Edge Bead Removal Solvents — High Risk of Pump Material Swelling & Leakage
EBR (Edge Bead Remover) and wafer edge/backside cleaning solvents are typically strong organic solvents such as PGMEA, PGME, and propylene glycol methyl ether (PM), with high dissolving power and low surface tension, causing severe swelling and corrosion of seals, diaphragms, and lubricants in conventional pumps. Under organic solvent environments, traditional pump service life is typically less than 3–6 months, and solvent leakage from seal failure not only wastes costly chemicals but, more critically, contaminates the cleanroom environment and threatens personnel safety.

Solution: Fully Solvent-Compatible, Zero-Leakage EBR Supply

· JONSN MRA series employs magnetic coupling static seal design — no dynamic seals in contact with solvents, fundamentally eliminating seal swelling and leakage risks.
· Available with full PTFE/PEEK flow path configuration — safely handles all common lithography solvents including PGMEA/PGME/PM/Cyclohexanone, with zero swelling and zero deformation.
· Compact form factor allows integration into the confined spaces inside Coater/Developer tools, reducing tubing length and fitting count.
· Optionally equipped with EPDM/FFKM static seals, full flow path solvent-resistant grade, design life >24 months.

Recommended Configuration: JONSN MRA/MPG Series, magnetic seal zero leakage, full PTFE/PEEK flow path, fully solvent-compatible, design life >24 months

▎Wide Photoresist Viscosity Range — Difficult Thick-Resist Supply
Thick photoresists (50–200 µm film thickness) commonly used in semiconductor packaging, MEMS, and power devices can reach viscosities of 500–5,000 cP, far higher than the 5–50 cP of standard i-line/KrF photoresists. Conventional diaphragm and progressive cavity pumps exhibit significant flow degradation at high viscosity, and viscosity changes during spin coating lead to uncontrollable film thickness. A single Coater often needs to switch between photoresists of different viscosities, placing higher demands on the pump's viscosity adaptability range.

Solution: Wide-Viscosity-Range Photoresist Delivery System

· JONSN DP series large-displacement gear pumps (0.2–100 cc/r) handle viscosity ranges of 1–50,000 mPa·s, easily managing thick-resist processes.
· MPG/MRA series covers low-viscosity (5–200 cP) standard photoresists, DP series covers high-viscosity thick resists, forming a complete product matrix.
· Gear pair clearances can be customized and optimized by viscosity, ensuring high volumetric efficiency (>90%) across all viscosity ranges.
· Compatible with heating jackets to reduce photoresist viscosity, ensuring flowability and metering precision during low-temperature delivery.

Recommended Configuration: JONSN DP Series (thick resist) + MPG/MRA Series (standard resist), wide-viscosity matrix covering 5–5,000 cP

▼ JONSN Lithography & Patterning Process Recommended Product Matrix
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▼ Core Value of JONSN Lithography Process Solution
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▸ Bubble-Free, Pulse-Free Delivery：MPG series involute tooth profile + magnetic drive fundamentally eliminates cavitation and pulsating flow. Photoresist coating defect density reduced to <0.01 /cm², photoresist waste rate <1%.

▸ Nanoliter-Level Metering Accuracy：40 µl/r ultra-small displacement with servo closed-loop control, per-spin-coat metering accuracy ≤ ±0.3%, providing the precision fluid foundation for CD uniformity and film thickness control.

▸ Full Wide-Viscosity Coverage：MPG/MRA covers standard photoresists (5–200 cP), DP series covers thick resists (500–5,000 cP), one-stop solution for i-line/KrF/ArF/EUV photoresist delivery across all generations.

▸ Full Solvent Compatibility & Zero Leakage：Magnetic coupling static seal + full PTFE/PEEK/FFKM material system, fully compatible with all lithography solvents including PGMEA/PGME/PM/Cyclohexanone/EL — zero leakage, zero contamination.

▸ Multi-Channel Independent Control：Multi-pump-head parallel configuration enables independent delivery of photoresist/BARC/developer/EBR — multiple chemicals with individually adjustable flow per channel, without cross-interference.

▸ Ultra-Pure Grade Contamination Control：MPG/MRA-UP ultra-pure series with metal ion leaching ≤ 1 ppb, SEMI F57/F104 compliant, meeting the extreme chemical purity requirements of EUV lithography.

▼ Conclusion
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Lithography is the “soul” of semiconductor manufacturing, and the precision delivery of photoresist, developer, BARC/TARC, and edge bead removal solvents is the “blood vessel” of that soul. With the five core capabilities of MPG/MRA/DP full-series micro gear pumps — bubble-free, pulse-free, wide viscosity range, solvent-resistant, and ultra-pure — JONSN delivers a complete fluid delivery solution for the lithography process, from precision photoresist coating and uniform developer supply to BARC/TARC ultra-thin film coating and edge bead solvent cleaning. Whether for mature i-line/KrF processes or cutting-edge EUV advanced nodes, JONSN provides reliable chemical delivery assurance, enabling precise control of every step from lithography to patterning.